Asymmetric high-k dielectric for reducing gate induced drain leakage

ABSTRACT

An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.

FIELD OF THE INVENTION

The invention relates to semiconductor structures and, moreparticularly, to an asymmetric high-k dielectric for reducing gateinduced drain leakage in high-k MOSFETs and methods of manufacture.

BACKGROUND

MOSFETs that operate above 1.1V (band gap of silicon) and have thindielectrics can suffer from Gate Induced Drain Leakage (GIDL).Conventional methods to improve GIDL include reducing extension implantdose; however, this increases FET resistance and hence reduces FETperformance. Also, heavily doped extension regions in combination withthinner high-k dielectrics create high gate-induced E-field at thegate-drain overlap region. This high field results in band-to-bandtunneling and gate-induced-drain-leakage (GIDL) current. GIDL leakage issignificant in long channel FETs as well as eDRAM array-FETs.

SUMMARY

In an aspect of the invention, a method comprises performing an implantprocess on a high-k dielectric sidewall of a gate structure. The methodfurther comprises performing an oxygen annealing process to grow anoxide region on a drain side of the gate structure, while inhibitingoxide growth on a source side of the gate structure adjacent to a sourceregion.

In an aspect of the invention, a method comprises performing a blockingprocess on a high-k dielectric sidewall on a source side of a gatestructure. The method further comprises performing an oxygen annealingprocess to grow an oxide region on a drain side of the gate structure,while inhibiting oxide growth on the source side of the gate structureadjacent to a source region.

In an aspect of the invention, a gate structure comprising a gatematerial on an asymmetrically thick gate dielectric is disclosed. Theasymmetrically thick gate dielectric may be comprised of a single ormultiple dielectric layers. In one embodiment, the gate dielectric maycomprise a high-k dielectric. In other embodiments, the gate dielectricmay include a high-k dielectric and an interfacial dielectric. In allembodiments, the asymmetrically thick gate dielectric is thicker on adrain side of the gate structure than a source side of the gatestructure.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1-3 show structures and respective processing steps in accordancewith aspects of the present invention.

FIGS. 4-6 show structures and respective processing steps in accordancewith additional aspects of the present invention.

FIGS. 7 and 8 show structures and respective processing steps inaccordance with yet additional aspects of the present invention.

FIGS. 9 and 10 show structures and respective gate first processingsteps in accordance with aspects of the present invention.

FIGS. 11 and 12 show structures and respective gate first processingsteps in accordance with additional aspects of the present invention.

DETAILED DESCRIPTION

The invention relates to semiconductor structures and, moreparticularly, to an asymmetric high-k dielectric for reducing gateinduced drain leakage in high-k MOSFETs and methods of manufacture. Morespecifically, in embodiments, the processes of the present inventionresult in a thicker high-k dielectric at a drain side of the device overthe extension region, resulting in reduced gate induced drain leakage(GIDL); whereas, a thin high-k dielectric is provided in the remainderof channel and source side to maintain good device performance andshort-channel behavior. In embodiments, the processes of the presentinvention can be implemented in both replacement metal gate (RMG)processes and gate first processes, as well as further implemented in aplanar device or a FinFET.

In more specific embodiments, the present invention provides severalfabrication processes in order to provide the advantages of the presentinvention. By way of one example, in a replacement metal gate process,after depositing high-k dielectric for the gate structure, an angledimplant of nitrogen is performed to nitridize a portion of one side ofthe high-k dielectric in an opening formed by removal of a dummy gate,followed by the fabrication of the metal gate (including a planarizingprocess). The process is then followed by a thermal anneal in oxygen.The nitridized high-k dielectric material, though, blocks oxygen flowwhile the non-nitridized sidewall allows oxygen to diffuse to thesubstrate/high-k interface resulting in a growth of thicker oxide on thedrain side of the device.

In another illustrative example of a replacement metal gate process,after depositing high-k dielectric for the gate structure, an angledimplant is performed at a portion of one side of the sidewall in thereplacement metal gate opening to damage the high-k dielectric on thesource side. The damaged implant process is followed by a gentle etch toremove the sidewall high-k layer on the source side of the device. Inthis way, it is possible to remove the sidewall high-k layer on a sourceside of the device, which is not necessary for FET operation. Theremoval of the sidewall high-k layer eliminates the pathway for oxygenregrowth on the source side only, during an anneal process. This leavesthe drain-side path for oxygen regrowth.

In yet another alternative process, for example, an oxygen blocking mask(e.g., a nitride layer) can be formed over the source side of thedevice. The oxygen blocking mask will prevent oxygen regrowth on thesource side only, during an anneal process. Other processes are alsocontemplated by the present invention, as described herein.

FIG. 1 shows a starting point of a fabrication process in accordancewith aspects of the present invention. Here, a fin 16 on a silicon oninsulator substrate is shown where 14 is the insulator and 12 is thesemiconductor substrate. The fin has source regions (S) and drainregions (D). Furthermore, the structure 10 is shown after formation andremoval of dummy gate to leave opening 26. The structure 10 may havesidewalls 20. Sidewalls 20, if they exist, are remnants from when thedummy gate was initially formed and source/drain implanted. Thesidewalls 20 can be a nitride based material, e.g., SiN; although othermaterials are also contemplated by the present invention. In addition,there is an interfacial dielectric layer 19. Interfacial dielectriclayer 19 may be an oxide of the fin material, and may also containnitrogen. The interfacial dielectric layer 19 may be formed in a dummygate formation and remain after dummy gate removal to create opening 26.Or, it may be re-formed after dummy gate removal.

In embodiments, after removal of the dummy gate, a high-k dielectriclayer 24 can be formed in the opening 26 to a top of the interfaciallayer 19. The high-k dielectric layer 24 can be a material such as ahafnium based material, e.g., HfO₂. In embodiments, the high-kdielectric layer 24 can be formed using a blanket deposition processsuch that the high-k dielectric layer 24 will be formed over sidewalls20 of the source and drain side of the device, as well as other exposedstructures.

In FIG. 2, an angled implant is performed to implant nitrogen into thehigh-k dielectric layer 24 on the source side of the device, asrepresented at reference numeral 24′. In embodiments, the angled implantis an asymmetric nitrogen implant into the source side of the high-kdielectric layer 24, e.g., adjacent to the source region S. The angle ofthe previous implant depends of the topography of the implanted devices:for a high aspect ratio it will be a more vertical angle. A typicalangle will be from 5 to 40 degrees, as a non-limited example. In shortchannel length devices, e.g., sub 50 nm, the angled implant can beperformed without a mask. As described herein, this angled implant ofnitrogen will help inhibit O₂ ingress through the high-k dielectriclayer 24, e.g., HfO₂, to the Si substrate, during low temperature oxygenanneal processes.

As shown in FIG. 3, a metal gate structure 28 is formed within theopening 26. The metal gate structure 28 can include the deposition ofmetal materials of different work functions depending on the designparameters of the device. Any metal material, e.g., TiN, deposited onthe surface of the structure, e.g., dielectric material, etc., can beremoved by a chemical mechanical polishing (CMP) process. The structurethen undergoes a low temperature O₂ anneal, e.g., 500° C. for about 30minutes. This low temperature anneal will form a regrowth of oxide toform, e.g., thick oxide layer 19′, on the drain side of the device,e.g., adjacent the drain region D; whereas, the nitrogen implantedregion 24′ will prevent or inhibit O₂ ingress on the source side of thedevice, e.g., adjacent to the source region S, during the thermal annealprocess. In embodiments, the thick oxide layer 19′ can increase fromabout 1.5 nm to about 1.8 nm, thereby decreasing the JGIDL by a factorof approximately 266.

FIGS. 4-6 show structures and respective processing steps in accordancewith additional aspects of the present invention. As in the previousaspect of the present invention, the processes of FIGS. 4-6 can be basedon replacement metal gate processes, in finFET technologies; althoughplanar devices are also contemplated by the present invention. Inparticular, in FIG. 4, the structure 10′ undergoes an implantationprocess to damage the high-k dielectric layer 24 on the source side ofthe device, as representatively shown at reference numeral 24″. Thedamaging implantation process can comprise an oxygen implant or otherdamaging species including but not limited to Germanium, Xenon, or ArgonEnergy of the implant will be chosen based on the chosen species todamage only the dielectric layer

As shown in FIG. 5, the damaged high-k dielectric layer can then beremoved to expose the underlying sidewalls 20 on the source side of thedevice, e.g., adjacent to the source region S, while leaving the high-kdielectric layer 24 on the sidewalls on the drain side of the device,e.g., adjacent to the drain region D. This removal process willeliminate the pathway for O₂ ingression to the Si substrate. The removalprocess can be a gentle etch removal process, like e.g., a dilute HFprocess, selective to the damaged layer 24″.

As shown in FIG. 6, a metal gate structure 28 is formed within theopening 26. The metal gate structure 28 can include the deposition ofmetal materials of different work functions depending on the designparameters of the device. Any metal material deposited on the surface ofthe structure, e.g., dielectric material, etc., can be removed by achemical mechanical polishing (CMP) process. The structure thenundergoes a low temperature O₂ anneal, e.g., 500° C. for about 30minutes. This low temperature anneal will form a regrowth of oxygen 19′on the drain side of the device, e.g., adjacent the drain region D;whereas, the removal of the high-k dielectric material on the sourceside (e.g., adjacent to the source region S) will prevent O₂ regrowth onthe source side of the device during this anneal process. Inembodiments, the thick oxide layer 19′ can increase from about 1.5 nm toabout 1.8 nm, thereby decreasing the JGIDL by a factor of approximately266.

FIGS. 7 and 8 show structures and respective processing steps inaccordance with additional aspects of the present invention. As in theprevious aspects of the present invention, the processes of FIGS. 7 and8 can be based on replacement metal gate processes, in finFETtechnologies; although planar devices are also contemplated by thepresent invention. In particular, in FIG. 7, the structure 10″ includesthe deposition of a masking material 30 on a source side of the device,e.g., overlapping a source side of the replacement gate structure 28. Inembodiments, the masking material is nitrogen, formed using conventionaldeposition, lithography and etching processes.

As further shown in FIG. 7, the structure undergoes an anneal process.For example, the structure 10″ can undergo a low temperature oxygenanneal, e.g., 500° C. for about 30 minutes. By using the maskingmaterial 30 on a source side of the device, e.g., overlapping a sourceside of the gate structure 28, oxygen will be prevented from channelinginto the Si substrate via the high-k 24 (e.g., HfO₂) on the sidewall onthe source side of the device (e.g., adjacent to the source region S);whereas, regrowth of oxygen 19′ will form on the drain side of thedevice, e.g., adjacent the drain region D. As in any of the aspects ofthe present invention, the thickness of the regrown thick oxide 19′ canbe controlled by introducing and adjusting the low temperature O₂anneal. The masking material can then be removed using a conventionaletching process, as shown representatively in FIG. 8. In embodiments,the thick oxide layer 19′ can increase from about 1.5 nm to about 1.8nm, thereby decreasing the JGIDL by a factor of approximately 266.

FIGS. 9-12 show structures and respective processing steps using gatefirst processes. In these processes, an asymmetric high-k dielectricconstruct is created to increase the oxide thickness at the drain sideto limit the gate-induced electric field, leading to smaller GIDLcurrent. The oxide thickness is kept the same at the source side. In theprocessing steps in FIGS. 9 and 10, an angled oxygen implant isperformed after spacer formation. In addition, a RIE can be applied onthe drain side to purposely create a poor encapsulation to enhanceregrowth. In the processing steps of FIGS. 11 and 12, an alternativeapproach is to grow a thin HfO₂ layer as the first spacer, which willact as a pathway for O₂ to reach the gate oxide. In these embodiments,the thick oxide layer can increase from about 1.5 nm to about 1.8 nm,thereby decreasing the JGIDL by a factor of approximately 266.

More specifically, in contrast to the previous aspects of the presentinvention, the processes of FIGS. 9 and 10 show gate oxide regrowth withgate first processes, in finFET technologies; although planar devicesare also contemplated by the present invention. In particular, in FIG.9, the structure 10″′ includes a gate material 28′ formed on a high-kdielectric material 24, e.g., high-k dielectric material such as HfO₂.There may be an intervening interfacial layer ((e.g.) 19 not shown)between the high-k dielectric material 24 and the substrate. A spacermaterial 32 is deposited on the gate material 28′ using conventionaldeposition processes, e.g., CVD. In embodiments, the spacer material 32can be Si₃N₄. A mask 34 is formed on the source side of the device,followed by an angled implant of oxygen or other damaging species, e.g.,Germanium, Xenon, Argon or others damaging species, on the drain side.For purposes of this description, the damaging species can also be anetchant used with reactive ion etching processes on the drain side. Ineither scenario, the spacer material on the drain side of the devicebecomes damaged, as represented by reference numeral 32′.

In FIG. 10, the mask is removed using a conventional stripping process.For example, the mask can be removed by dry process using N₂H₂ or a wetprocess SP. After additional processing, e.g., anisotropic etching ofsidewall material, a regrowth of oxygen 19′ (thick oxide layer) isformed on the drain side of the device, e.g., adjacent the drain regionduring low temperature annealing process; whereas, the nitride sidewallon the source side (e.g., adjacent to the source region) will prevent orinhibit O₂ ingress on the source side of the device during the annealprocess. The device can then undergo further processing including spacerformation followed by halo and extension implant processes.

FIGS. 11 and 12 show structures and respective processing steps inaccordance with additional aspects of the present invention. As with thestructures and fabrication processes shown in FIGS. 9 and 10, theprocesses of FIGS. 11 and 12 show gate oxide regrowth with gate firstprocesses, in finFET technologies; although planar devices are alsocontemplated by the present invention. In particular, in FIG. 11, thestructure 10″″ includes a gate material 28′ formed on a high-kdielectric material 24, e.g., high-k dielectric material such as HfO₂.An interfacial dielectric (19 not shown) may be between the high-k andthe substrate. A nitride material 36, e.g., Si₃N₄, is formed on asurface of the gate material 28′. A spacer material 32 is deposited onthe structure using conventional deposition processes, e.g., CVD. Inembodiments, the spacer material 32 can be a nitride material, e.g.,Si₃N₄. A mask 34 is formed on the drain side of the device, followed byan angled implant of oxygen or other damaging species, e.g., Germanium,Xenon, Argon or other damaging species, to form a damaged region 32″ ofthe spacer 32 on the source side of the device.

In FIG. 12, the damaged region 32′ on the source side of the device isremoved using conventional etching processes, selective to the damagedregion 32′. The mask is also removed using conventional etchingprocesses, selective to the mask. A second spacer 38 is then depositedon the structure, e.g., exposed portions of the high-k dielectricmaterial 24, gate material 28′, nitride material 36 and spacer material32, using conventional deposition processes, e.g., CVD. In embodiments,the second spacer 38 is a nitride material. The horizontal surfaces ofthe spacers 32, 38 and the nitride material 36 are then removed using ananisotropic etching process. A mask 34′ is then formed, e.g., depositedand patterned, over the source side of the device, followed by removalof the spacer covering the high-k dielectric material 24, formed on thedrain side of the device. The structure then undergoes a low temperatureanneal process, e.g., 500° C. for about 30 minutes. This low temperatureanneal will form a regrowth of oxygen 19′ on the drain side of thedevice, e.g., adjacent the drain region; whereas, the nitride sidewallon the source side of the device will prevent or inhibit O₂ ingressduring this anneal process. The mask 34′ can then be removed, followedby conventional CMOS processes.

The method(s) as described above is used in the fabrication ofintegrated circuit chips. The resulting integrated circuit chips can bedistributed by the fabricator in raw wafer form (that is, as a singlewafer that has multiple unpackaged chips), as a bare die, or in apackaged form. In the latter case the chip is mounted in a single chippackage (such as a plastic carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(such as a ceramic carrier that has either or both surfaceinterconnections or buried interconnections). In any case the chip isthen integrated with other chips, discrete circuit elements, and/orother signal processing devices as part of either (a) an intermediateproduct, such as a motherboard, or (b) an end product. The end productcan be any product that includes integrated circuit chips, ranging fromtoys and other low-end applications to advanced computer products havinga display, a keyboard or other input device, and a central processor.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed:
 1. A method comprising: forming a replacement gate structure on a fin structure, the replacement gate structure comprising: an interfacial material on a bottom of a trench structure; a gate dielectric material on the interfacial material on the bottom and sidewalls of the trench; gate material on the gate dielectric material; depositing a masking material on a source side of the replacement gate structure; and performing an anneal process on the replacement gate structure to grow oxide on a drain side of the replacement gate structure, while the masking material inhibits oxide growth on the source side of the replacement gate structure.
 2. The method of claim 1, wherein the masking material is a nitrogen based material.
 3. The method of claim 1, wherein the anneal process is a low temperature oxygen anneal.
 4. The method of claim 3, wherein the low temperature oxygen anneal is at 500° C. for about 30 minutes.
 5. The method of claim 1, wherein the masking material is formed to overlap the replacement gate structure on the source side, on a top portion.
 6. The method of claim 1, wherein the masking material prevents oxygen from channeling into an Si substrate via the gate dielectric material on the sidewall on the source side.
 7. The method of claim 6, wherein the gate dielectric material on the sidewalls is high-k dielectric material.
 8. The method of claim 1, wherein a thickness of the oxide growth is controlled by introducing and adjusting low temperature O₂ anneal.
 9. The method of claim 1, wherein the anneal process is performed on high-k dielectric sidewall of the replacement gate structure.
 10. The method of claim 1, wherein the interfacial material has a first thickness on the source side and a second thickness on the drain side, the first thickness being different than the second thickness.
 11. The method of claim 10, wherein the interfacial material is thicker on the drain side of the replacement gate structure than the source side of the replacement gate structure.
 12. The method of claim 11, wherein the interfacial material is interfacial dielectric material.
 13. The method of claim 12, wherein the interfacial material comprises nitrogen. 